(Hong Kong)
Product Summary
The HY57V561620FTP-HI is a kind of 268,435,456bit CMOS Synchronous DRAM, which is ideally suited for the consumer memory applications which requires large memory density and high bandwidth. The HY57V561620FTP-HI is organized as 4banks of 4,194,304 x 16 I/O. In addition, the HY57V561620FTP-HI provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4,8 locations or full page.
Parametrics
HY57V561620FTP-HI absolute maximum ratings: (1)Ambient Temperature, TA: -40 to 85℃; (2)Storage Temperature, TSTG: -55 to 125℃; (3)Voltage on Any Pin relative to VSS, VIN, VOUT: -1.0 to 4.6 V; (4)Voltage on VDD supply relative to VSS, VDD, VDDQ: -1.0 to 4.6 V; (5)Short Circuit Output Current, IOS: 50 mA; (6)Power Dissipation, PD: 1 W.
Features
HY57V561620FTP-HI features: (1)Standard SDRAM Protocol; (2)Internal 4bank operation; (3)Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V; (4)All device pins are compatible with LVTTL interface; (5)Low Voltage interface to reduce I/O power; (6)8,192 Refresh cycles / 64ms; (7)Programmable CAS latency of 2 or 3; (8)Programmable Burst Length and Burst Type: 1, 2, 4, 8 or full page for Sequential Burst; 1, 2, 4 or 8 for Interleave Burst; (9)-40℃ to 85℃ Operation; (10)Package Type : 54-Pin TSOPII (Lead Free).
Diagrams
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